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  2N4400 2n4401 silicon npn transistors description: the central semiconductor 2N4400 and 2n4401 are silicon npn transistors designed for general purpose amplifier and switching applications. pnp complementary types are 2n4402 and 2n4403. marking: full part number to-92 case maximum ratings: (t a =25c) symbol units collector-base voltage v cbo 60 v collector-emitter voltage v ceo 40 v emitter-base voltage v ebo 6.0 v continuous collector current i c 600 ma power dissipation p d 625 mw operating and storage junction temperature t j , t stg -65 to +150 c electrical characteristics: (t a =25c ) 2N4400 2n4401 symbol test conditions min max min max units i cev v ce =35v, v eb =0.4v - 100 - 100 na bv cbo i c =0.1ma 60 - 60 - v bv ceo i c =1.0ma 40 - 40 - v bv ebo i e =0.1ma 6.0 - 6.0 - v v ce(sat) i c =150ma, i b =15ma - 0.40 - 0.40 v v ce(sat) i c =500ma, i b =50ma - 0.75 - 0.75 v v be(sat) i c =150ma, i b =15ma 0.75 0.95 0.75 0.95 v v be(sat) i c =500ma, i b =50ma - 1.2 - 1.2 v h fe v ce =1.0v, i c =0.1ma - - 20 - h fe v ce =1.0v, i c =1.0ma 20 - 40 - h fe v ce =1.0v, i c =10ma 40 - 80 - h fe v ce =1.0v, i c =150ma 50 150 100 300 h fe v ce =2.0v, i c =500ma 20 - 40 - h fe v ce =10v, i c =1.0ma, f=1.0khz 20 250 40 500 f t v ce =10v, i c =20ma, f=100mhz 200 - 250 - mhz c ob v cb =5.0v, i e =0, f=100khz - 6.5 - 6.5 pf c ib v be =0.5v, i c =0, f=100khz - 30 - 30 pf t on v cc =30v, v eb(off) =2.0v, i c =150ma, i b1 =15ma - 35 - 35 ns t off v cc =30v, i c =150ma, i b1 =i b2 =15ma - 255 - 255 ns r2 (2-december 2014) www.centralsemi.com
2N4400 2n4401 silicon npn transistors lead code: 1) emitter 2) base 3) collector marking: full part number to-92 case - mechanical outline www.centralsemi.com r2 (2-december 2014)
2N4400 2n4401 silicon npn transistors typical electrical characteristics r2 (2-december 2014) www.centralsemi.com
2N4400 2n4401 silicon npn transistors services ? bonded inventory ? custom electrical screening ? custom electrical characteristic curves ? spice models ? custom packaging ? package base options ? custom device development / multi discrete modules (mdm?) ? bare die available for hybrid applications limitations and damages disclaimer: in no event shall central be liable for any collateral, indirect, punitive, incidental, consequential, or exemplary damages in connection with or arising out of a purchase order or contract or the use of products provided hereunder, regardless of whether central has been advised of the possibility of such damages. excluded damages shall include, but not be restricted to: cost of removal or reinstallation, rework, ancillary costs to the procurement of substitute products, loss of profits, loss of savings, loss of use, loss of data, or business interruption. no claim, suit, or action shall be brought against central more than two (2) years after the related cause of action has occurred. in no event shall centrals aggregate liability from any warranty, indemnity, or other obligation arising out of or in connection with a purchase order or contract, or any use of any central product provided hereunder, exceed the total amount paid to central for the specific products sold under a purchase order or contract with respect to which losses or damages are claimed. the existence of more than one (1) claim against the specific products sold to buyer under a purchase order or contract shall not enlarge or extend this limit. buyer understands and agrees that the foregoing liability limitations are essential elements of a purchase order or contract and that in the absence of such limitations, the material and economic terms of the purchase order or contract would be substantially different. www.centralsemi.com r2 (2-december 2014)


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